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| INCLUDING OF ADMIXTURE BORON ATOMS IN THE ELECTRIC NONACTIVE STATE TO SILICON SINGLE-CRYSTAL |
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UDC 621.315.592; 538.91 E.Ya. Shvets, professor, c.t.s. A.К. Golovko, graduate student
INCLUDING OF ADMIXTURE BORON ATOMS IN THE ELECTRIC NONACTIVE STATE TO SILICON SINGLE-CRYSTAL Zaporozhe state engineering academy, Ukraine According of to experimental data by means of mathematical modeling was evaluated the pro-portion of those nonactive boron atoms, which are part of a single crystal silicon in an electri-cally inactive state at various stages of his growing by the of Czochralskij method. Keywords: silicon, single crystal, boron, nonactive, electrically inactive impurity ![]() NONACTIVE STATE TO SILICON SINGLE-CRYSTAL 26 | |
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