УДК 669.295
E.A. Golev, graduate student
I.F. Chervony, manager by a department, professor, d.t.s.

ROWING OF SINGLE-CRYSTALS OF SILICON ON RELIABILITY GRAPHITE RIGGING
Zaporozhe state engineering academy, Ukraine
The influence of place to gas-vapor mixture from the chamber of growing silicon single crystals by Czochralskij method on the reliability of graphite equipment has been given.
The analysis results of the fulfilled experiments shows that the placement of the vacuum discharge in chamber growing renders influence on resistance of the graphite tooling and the quality of the grown single crystals.
Key words: silicon, single crystal, growing, Czochralskij method, furnace, argon, admixtures
ROWING OF SINGLE-CRYSTALS OF SILICON ON RELIABILITY GRAPHITE
14